SK Hynix Launches R&D on 3D Stacked DRAM for Edge AI Storage

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SK Hynix is advancing R&D on 3D stacked DRAM for edge AI storage in partnership with MetaEra. The company is hiring design engineers in the U.S. and plans to co-develop the technology with clients. This on-chain news underscores a key trend in AI and crypto developments, as the stacked memory is poised to enable edge AI in the post-generative AI era. The design stacks memory directly onto logic chips to enhance performance for next-generation AI devices.
ME AI News: SK Hynix is accelerating the development of 3D stacked DRAM, a next-generation DRAM technology regarded as essential for edge AI. The company has recently launched a talent recruitment initiative and plans to collaborate with U.S. customers to co-design the technology. 3D stacked DRAM is a next-generation semiconductor technology that stacks memory chips directly on top of logic semiconductors (system semiconductors). Industry experts anticipate that this technology will become a core semiconductor solution for edge AI devices in the post-generative AI era of physical AI. SK Hynix is currently recruiting 3D stacked DRAM design engineers through its U.S. subsidiary in San Jose to advance R&D in this area. Click the link below to join Dongcha Beating · Feishu AI News Channel, which provides 24/7 monitoring of global AI trends and news. (Source: BlockBeats)
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