ChainCatcher reports that SK Hynix stated on the 9th that the development of next-generation memory, 3D DRAM semiconductors, can leverage foundry processes. The previous day, at the 2026 SK Hynix Future Forum held at the Supex Center in the Yeosu campus, Vice Presidents Kim Kyung-hoon and Son Ho-young outlined key technical directions for 3D DRAM, including using logic foundry processes for DRAM peripheral circuits, maximizing data bus bandwidth, and enabling ultra-short-distance transmission. 3D DRAM is a next-generation DRAM that vertically stacks memory cells originally laid out in a planar configuration to increase integration density. They noted that, beyond design and thermal challenges, implementing this technology also requires solving packaging-related challenges such as fine-scale interconnects, bonding, and process integration. As the boundaries between front-end and back-end packaging, and between foundry and memory technologies, continue to converge, cross-domain optimization will become increasingly critical. Son Ho-young stated that 3D technology is reshaping the technological boundaries between wafer fabrication and packaging, and that new collaboration frameworks and optimizations beyond traditional domains must be established alongside innovations in advanced packaging. Professor Shin Chang-hwan from Korea University, speaking on the same topic, emphasized that 3D DRAM is not merely about vertically stacking chips but represents a technology that breaks down the boundaries between memory and logic; as device miniaturization approaches its physical limits and data movement between systems and memory leads to increased latency and power consumption, the shift to 3D technology is inevitable. He proposed a 3D integration design framework that integrates artificial intelligence across four domains: materials, devices, packaging, and architecture. SK Hynix CEO Kwak No-jung, in his keynote address, said that the memory market used to resemble a straight race to see who could run faster, but now it has become a constantly changing curve—where understanding the speed and direction of external environmental changes and adapting flexibly is as important as internal capabilities.
SK Hynix Explores 3D DRAM Development Using Foundry Processes
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Summary
SK Hynix outlined its 3D DRAM development roadmap at the 2026 Future Forum, emphasizing foundry processes for peripheral circuits, high-speed data bus interconnects, and ultra-short transmission. Key challenges include fine-pitch interconnects and bonding. Son Ho-young stated that 3D technology is blurring the boundaries between wafer fabrication and packaging, driving new CFT-compliant collaborations. Professor Shin noted that 3D DRAM could enhance risk-on assets by integrating AI, advanced materials, and novel architectures.
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