Odaily Planet Daily report: SK Hynix and SanDisk have unveiled the first standard specification for High Bandwidth Flash (HBF), the next-generation storage technology based on NAND flash. SK Hynix presented the specification at FMS 2026 in Santa Clara, California, from August 4 to 6.
HBF stacks NAND flash memory in a vertical stack similar to High Bandwidth Memory (HBM) to increase capacity and data transfer speed. The specification defines two stacking configurations—8-layer and 16-layer NAND dies—with a maximum capacity of 512 GB and three bandwidth tiers supporting 0.4 TB/s to 3.0 TB/s.
HBF connects to processors using the industry-standard UCIe, enabling connectivity with different types of processors such as GPUs and CPUs. This specification is publicly available through the Open Compute Project (OCP), and the HBF consortium currently includes Google and AI semiconductor company Tenstorrent.
SK Hynix will also publicly unveil its upcoming 10th-generation (V10) 375-layer 4D NAND wafer and product for the first time at this event, and plans to begin mass production of high-performance, high-capacity enterprise SSDs (eSSDs) based on this technology in early next year.
