SK Hynix Accelerates 1c DRAM Production, Set to Surpass Samsung by Q4

ME News reports that on September 7 (UTC+8), SK Hynix is accelerating the increase in production share of its 10-nanometer-class sixth-generation (1c) DRAM. Industry sources indicate that SK Hynix is speeding up the transition in the second half of the year, potentially reaching a 34% share in the fourth quarter, surpassing Samsung Electronics’ approximate 31%. During its second-quarter earnings call, SK Hynix stated that DRAM production using the 1c process began substantially in the second quarter, and with increased shipments of HBM4 and general-purpose 1c DRAM in the second half, bit growth will exceed that of the first half. Samsung Electronics began using 1c DRAM with HBM4, achieving a speed of approximately 11.7 Gbps; previously, SK Hynix prioritized production stability by using its proven 1b DRAM combined with advanced MR-MUF packaging, and will for the first time adopt 1c DRAM as the core chip in its next-generation HBM4E. According to estimates from Counterpoint Research and others, NVIDIA, Google, and AMD combined are expected to account for approximately mid-50% of the HBM4 market share for SK Hynix, late-20% for Samsung Electronics, and late-10% for Micron. (Source: ChainCatcher)