According to ME News, on August 11 (UTC+8), Park Chang-min of Samsung Electronics’ Foundry Process Development Team stated at the "2026 Next-Generation Lithography + Patterning Chemistry Conference" that the company plans to implement High-NA EUV technology starting with the 1-nanometer (A10) process, targeting mass production around 2030. Currently, Samsung continues to use existing 0.33 NA EUV multiple patterning solutions for its 2-nanometer and below processes, with plans to achieve mass production of the 1.4-nanometer process in 2029, followed by progression to the 1-nanometer node. High-NA EUV increases the numerical aperture (NA) of the lens from 0.33 to 0.55, offering higher resolution and enabling ultra-fine patterning previously requiring multiple steps to be accomplished in a single exposure, thereby reducing manufacturing costs, improving production efficiency, and enhancing design flexibility. However, this technology is highly complex, expensive to implement, and requires synchronized advancements in supporting materials. Park Chang-min expects that 0.33 NA EUV multiple patterning will remain dominant for the 1.4-nanometer and 1-nanometer processes, after which High-NA patterning will become the core technology for next-generation nodes. (Source: ChainCatcher)
Samsung Plans to Introduce High-NA EUV Technology for the 1nm Process by 2030
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Samsung’s Foundry process team, led by Park Chang-min, revealed at a 2026 conference that High-NA EUV technology will be used for its 1nm (A10) process, with mass production scheduled for 2030. The company currently relies on 0.33 NA EUV with multiple patterning for 2nm and below, with the 1.4nm node planned for 2029. High-NA EUV increases the NA to 0.55, enabling single patterning, reduced costs, and improved efficiency, but requires expensive material upgrades. Park stated that the 1.4nm and 1nm nodes will continue to use 0.33 NA EUV for now, with High-NA EUV becoming central in future nodes. This development remains key for crypto news and cryptocurrency news.
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