Huo Xing Finance reports that South Korea’s Samsung Electronics and SK Hynix are accelerating their deployment of HBM and next-generation memory technologies to maintain their competitive edge. Samsung Electronics stated that its R&D investment in the second quarter reached a record 16 trillion Korean won (approximately $11.6 billion), and plans to expand its lineup of high-end memory products, including HBM4, HBM4E, and DDR5. SK Hynix is currently developing next-generation technologies such as HBM5, hybrid bonding, and iHBM, with expected capital expenditures this year reaching 40 trillion Korean won (approximately $32.6 billion).
Samsung and SK Hynix Increase R&D and Investment in HBM and Next-Generation Memory Technology
MarsBitShare
Summary
In the latest crypto news, Samsung and SK Hynix are accelerating R&D and investment in HBM and next-generation memory technologies. Samsung invested 16 trillion KRW ($116 billion) in R&D during Q2 and is expanding its high-end storage lineup, including HBM4, HBM4E, and DDR5. SK Hynix is developing HBM5, hybrid bonding, and iHBM, with expected capital expenditures of 40 trillion KRW ($326 billion) this year.
Source:Show original
Disclaimer: The information on this page may have been obtained from third parties and does not necessarily reflect the views or opinions of KuCoin. This content is provided for general informational purposes only, without any representation or warranty of any kind, nor shall it be construed as financial or investment advice. KuCoin shall not be liable for any errors or omissions, or for any outcomes resulting from the use of this information.
Investments in digital assets can be risky. Please carefully evaluate the risks of a product and your risk tolerance based on your own financial circumstances. For more information, please refer to our Terms of Use and Risk Disclosure.