ChainCatcher reports that South Korea’s Samsung Electronics and SK Hynix are accelerating their deployment of HBM and next-generation memory technologies to maintain their competitive edge. Samsung Electronics stated that its R&D investment in the second quarter reached a record 16 trillion Korean won (approximately $11.6 billion) and plans to expand its lineup of high-end memory products, including HBM4, HBM4E, and DDR5. SK Hynix is developing next-generation technologies such as HBM5, hybrid bonding, and iHBM, with expected capital expenditures this year reaching 40 trillion Korean won (approximately $32.6 billion).
Samsung and SK Hynix Increase HBM R&D and Investment
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Summary
Samsung and SK Hynix are increasing R&D and investment in HBM and next-generation memory technologies. Samsung spent 16 trillion KRW ($116 billion) on R&D in Q2 and plans to launch HBM4, HBM4E, and DDR5. SK Hynix is developing HBM5, hybrid bonding, and iHBM, with capital expenditures expected to reach 40 trillion KRW ($326 billion) this year. This push comes as cryptocurrency news highlights rising demand for high-performance hardware in the crypto sector.
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