Kioxia and SanDisk Launch 332-Layer QLC NAND with 4800 MT/s Interface

According to Huoxing Finance, on August 5, Kioxia and SanDisk officially unveiled their latest BiCS10 3D QLC NAND flash chip at the Future of Memory and Storage Conference (FMS), billed as the highest storage density 3D NAND product currently available on the market. The chip features a 332-layer stack structure, achieving a storage density of 37 Gb/mm², supports a high-speed interface up to 4800 MT/s, and includes Support for Single Command Address (SCA) functionality, primarily targeting high-capacity data center SSD markets. Compared to the previously released BiCS10 3D TLC NAND products, which offered over 29 Gb/mm² density, the new QLC NAND further increases storage capacity density in data centers. Industry analysts estimate that, under similar chip size and cell count conditions, this chip may reach approximately 1.33 Tb capacity, though the manufacturers have not yet disclosed specific capacity specifications. To meet data center demands for high performance and low power consumption, Kioxia and SanDisk have introduced Power-Isolated Low-Tap Termination (PI-LTT) technology, enhancing high-speed signal integrity while reducing output driver power consumption. Both companies stated that, based on the latest BiCS10 process technology, the new generation of QLC NAND not only achieves higher bit density but also has the potential to reduce manufacturing costs after scaling up production, enabling higher-capacity SSDs to enter the market at more competitive prices.