DRAM Memory ETF Adds ChangXin Technology with a 2.52% Weight

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The DRAM Memory ETF has seen inflows following the addition of ChangXin Technology with a 2.52% weight. Launched on April 2, 2026, the ETF holds $24.55 billion in assets and has returned 161.5% from a peak of 190%. Samsung, Micron, and SK Hynix account for over 73% of the portfolio. ChangXin, a leading A-share memory manufacturer, is the latest addition. While ETF outflows have pressured the sector, the ETF remains a key exposure to memory demand.

Odaily Planet Daily reports that on-chain analyst Aunt Ai posted on X that the U.S. market’s first pure storage ETF, the DRAM Memory ETF, includes CXMT. The ETF was established on April 2, 2026, with assets under management of $24.55 billion and a peak return of 190%; despite a recent correction in the storage sector, its return remains at 161.5%. Samsung, Micron, and SK Hynix together account for over 73% of the weight, and with the inclusion of CXMT—following GigaDevice—this marks the second time an A-share storage leader has been added, with CXMT’s weight at 2.52%.

Since its listing on the STAR Market, ChangXin Technology has maintained a market capitalization of over RMB 3 trillion and briefly surpassed RMB 4 trillion. It will transition from the no-price-limit phase to the regular trading phase starting next Monday.

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