ChainCatcher report, according to TechPowerUp, China’s DRAM manufacturer CXMT is expected to reach a monthly DRAM wafer capacity of approximately 350,000 by the end of 2026, compared to Micron’s estimated capacity of about 375,000 during the same period. CXMT’s cleanroom construction cycle is approximately 12 months, shorter than the industry’s typical 21 to 24 months. Restricted by U.S. sanctions from acquiring EUV lithography, CXMT utilizes older DUV lithography and multiple patterning technologies. The company has begun shipping 16 Gb DDR5 chips at 8000 MT/s, with a die size of 67 mm² and a density of 0.239 Gb/mm²; the G4 cell is 20% smaller than the G3. 24 Gb modules are in mass production at approximately 6000 MT/s, and LPDDR5X-10667 modules (12 Gb and 16 Gb) have also entered mass production. The Chinese government is encouraging CXMT to transfer DRAM IP to domestic firms such as JHICC, Swaysure, and XMC, a subsidiary of Yangtze Memory Technologies.
CXMT to Reach 350,000 DRAM Wafers/Month by 2026, Approaching Micron’s Capacity
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Summary
ChangXin Memory Technologies (CXMT) is on track to increase its monthly DRAM wafer output to 350,000 units by 2026, nearly matching Micron’s 375,000. Its 12-month cleanroom construction cycle surpasses the industry norm of 21–24 months. Under U.S. sanctions, CXMT relies on DUV lithography and multiple patterning instead of EUV. It currently ships 16 Gb DDR5 chips at 8000 MT/s, featuring a 67 mm² die size and a density of 0.239 Gb/mm². The G4 cell is 20% smaller than G3, while 24 Gb modules achieve 6000 MT/s, and LPDDR5X-10667 modules are in mass production. The Chinese government is encouraging CXMT to share DRAM IP with domestic firms such as JHICC and XMC. With robust production growth, CXMT’s risk-to-reward ratio appears favorable, and its advancements may establish key support and resistance levels for industry participants in the coming months.
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