CXMT Achieves Key Milestone in 4F² Memory Structure, Plans Server Memory Launch by 2026

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ChangXin Memory (CXMT) announced the token launch related to its 4F² memory structure, marking significant progress in server memory development. The company plans to launch server memory products by 2026, utilizing the 4F² design to enhance memory density and efficiency. Each memory cell occupies an area of 4F², where F represents the semiconductor’s minimum feature size. This architecture outperforms the mainstream 6F² DRAM used by Samsung and SK Hynix, reflecting ongoing industry trends in memory innovation.

ChainCatcher report: Chinese memory chip company CXMT (XMC) has made significant progress in a new memory architecture. Samsung Electronics and SK Hynix are also advancing similar structures to increase storage density. At an industry event in Shanghai, CXMT President Cao Kanyu stated that the company plans to launch new server memory products based on this architecture by the end of 2026, according to the company’s official statement. The architecture features a 4F² design, meaning each memory cell occupies an area of 4F², where F represents the minimum semiconductor linewidth. The company says its proprietary transistor design increases storage density and improves efficiency by enabling more memory cells to be packed onto a single chip. Current mainstream commercial DRAM uses a 6F² cell structure.

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