Samsung Expands NAND Flash Collaboration with Nvidia Amid Rising AI Storage Demand

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Samsung is deepening its NAND flash collaboration with Nvidia, transitioning to V9 production as demand for server storage surges amid AI and crypto-related news. The partnership announcement follows increased demand for AI server KV cache and Nvidia’s Rubin CMX system, which requires NAND at Apple-scale volumes. Samsung is also advancing V10 production using molybdenum and plans to discuss HBM and NAND cooperation with Nvidia’s CEO.

ME News reports that on July 20 (UTC+8), Citrini analyst Jukan stated that Samsung is expanding its NAND flash alliance with Nvidia, adding V9 supply to its existing collaborations in DRAM, HBM, and foundry services, while initiating mass production of V10 and accelerating the development of 500-layer V11. Driven by surging demand from AI server KV caches and Nvidia’s CMX storage system—which includes 576 SSDs with a total capacity of 9,600 TB—Samsung is rapidly shifting its V-NAND production capacity toward V9 and plans to significantly increase output. “Nvidia’s Rubin CMX will absorb NAND supply like a sponge absorbing water. For perspective, it’s roughly equivalent to adding another Apple-sized demand source to the NAND market.” Additionally, Samsung has begun incorporating molybdenum material innovations in V10 to enhance density. Chairman Lee Jae-yong is set to meet with Jensen Huang to discuss deepening cooperation on HBM and NAND supply, as well as data center initiatives in South Korea. (Source: BlockBeats)

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